Cell Layout and Structure

ABSTRACT

A post placement abutment treatment for cell row design is provided. In an embodiment a first cell and a second cell are placed in a first cell row and a third cell and a fourth cell are placed into a second cell row. After placement vias connecting power and ground rails to the underlying structures are analyzed to determine if any can be merged or else removed completely. By merging and removing the closely placed vias, the physical limitations of photolithography may be by-passed, allowing for smaller structures to be formed.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of and claims priority to U.S. patentapplication Ser. No. 15/971,646, filed on May 4, 2018, and entitled“Cell Layout and Structure,” which is a division of and claims priorityto U.S. patent application Ser. No. 14/473,614, filed on Aug. 29, 2014,and entitled “Cell Layout and Structure,” now U.S. Pat. No. 9,984,191issued on May 29, 2018, which applications are incorporated herein byreference.

BACKGROUND

Generally, electronic design automation (EDA) tools assist semiconductordesigners to take a purely behavioral description of a desired circuitand work to fashion a finished layout of the circuit ready to bemanufactured. This process usually takes the behavioral description ofthe circuit and turns it into a functional description, which is thendecomposed into thousands of Boolean functions and mapped into rows ofcells using a standard cell library. Once mapped, a synthesis isperformed to turn the structural design into a physical layout.

However, as semiconductor devices in general become smaller and smaller,technical problems have arisen within the field of electronic designautomation. Such issues can arise when structural designs reach thephysical limitations of the manufacturing processes that will be used toturn the designs into the physical semiconductor device. Such problemsneed to be addressed and overcome in order to continue to reduce theoverall size of the semiconductor devices.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a block diagram of a processing system in accordancewith some embodiments.

FIG. 2 illustrates a flow diagram used by an electronic designautomation system in accordance with some embodiments.

FIG. 3 illustrates a single cell in accordance with some embodiments.

FIGS. 4A-4D illustrate a first cell row and a second cell row inaccordance with some embodiments.

FIGS. 5A-5D illustrate a result of a post-placement treatment inaccordance with some embodiments.

FIGS. 6A-6F illustrate results of the post-placement treatment inaccordance with some embodiments.

FIGS. 7A-14G illustrate a process flow for the post-placement treatmentin accordance with some embodiments.

FIG. 15 illustrates a process flow diagram for the post-placementtreatment in accordance with some embodiments.

FIGS. 16A-25G illustrate a second process flow for the post-placementtreatment in accordance with some embodiments.

FIG. 26 illustrates a second process flow diagram for the post-placementtreatment in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

The present embodiments will be described with respect to specificembodiments in a specific context, namely using an electronic designautomation (EDA) tool to place cells and then perform a post abutmentvia treatment in order to obtain a higher density cell structure. Theembodiments, however, may also be applied to other methods of design aswell.

Referring now to FIG. 1, a block diagram of a processing system 100,such as an EDA processing system, is provided in accordance with anembodiment. The processing system 100 is a general purpose computerplatform and may be used to implement any or all of the processesdiscussed herein or is a dedicated computer platform for performingelectronic design. The processing system 100 may comprise a processingunit 110, such as a desktop computer, a workstation, a laptop computer,or a dedicated unit customized for a particular application. Theprocessing system 100 may be equipped with a display 114 and one or moreinput/output devices 112, such as a mouse, a keyboard, or printer. Theprocessing unit 110 may include a central processing unit (CPU) 120,memory 122, a mass storage device 124, a video adapter 126, and an I/Ointerface 128 connected to a bus 130.

The bus 130 may be one or more of any type of several bus architecturesincluding a memory bus or memory controller, a peripheral bus, or videobus. The CPU 120 may comprise any type of electronic data processor,such as a microprocessor, and the memory 122 may comprise any type ofsystem memory, such as static random access memory (SRAM), dynamicrandom access memory (DRAM), or read-only memory (ROM).

The mass storage device 124 may comprise any type of storage deviceconfigured to store data, programs, and other information and to makethe data, programs, and other information accessible via the bus 130.The mass storage device 124 may comprise, for example, one or more of ahard disk drive, a magnetic disk drive, an optical disk drive, or thelike.

The video adapter 126 and the I/O interface 128 provide interfaces tocouple external input and output devices to the processing unit 110. Asillustrated in FIG. 1, examples of input and output devices include thedisplay 114 coupled to the video adapter 126 and the I/O device 112,such as a mouse, keyboard, printer, and the like, coupled to the I/Ointerface 128. Other devices may be coupled to the processing unit 110,and additional or fewer interface cards may be utilized. For example, aserial interface card (not shown) may be used to provide a serialinterface for a printer. The processing unit 110 also may include anetwork interface 140 that may be a wired link to a local area network(LAN) or a wide area network (WAN) 116 and/or a wireless link.

It should be noted that the processing system 100 may include othercomponents. For example, the processing system 100 may include powersupplies, cables, a motherboard, removable storage media, cases, and thelike. These other components, although not shown, are considered part ofthe processing system 100.

In an embodiment an EDA is program code that is executed by the CPU 120to analyze a user file to obtain an integrated circuit layout (describedfurther below with respect to FIG. 2). Further, during the execution ofthe EDA, the EDA may analyze functional components of the layout, as isknown in the art. The program code may be accessed by the CPU 120 viathe bus 130 from the memory 122, mass storage device 124, or the like,or remotely through the network interface 140.

FIG. 2 illustrates one possible flow used by the EDA in an embodiment toautomatically generate a physical layout from a user suppliedbehavioral/functional design 201. The behavioral/functional design 201specifies the desired behavior or function of the circuit based uponvarious signals or stimuli applied to the inputs of the overall design,and may be written in a suitable language, such as a hardwaredescription language (HDL). The behavioral/functional design 201 may beuploaded into the processing unit 110 (see FIG. 1) through the I/Ointerface 128, such as by a user creating the file while the EDA isexecuting. Alternatively, the behavioral/functional design 201 may beuploaded and/or saved on the memory 122 or mass storage device 124, orthe behavioral/functional design 201 may be uploaded through the networkinterface 140 from a remote user (see FIG. 1). In these instances, theCPU 120 will access the behavioral/functional design 201 duringexecution of the EDA.

Additionally, the user also provides a set of design constraints 203 inorder to constrain the overall design of the physical layout of thebehavioral/functional design 201. The design constraints 203 may beinput, for example, through the I/O interface 128, downloading throughthe network interface 140, or the like. The design constraints 203 mayspecify timing and other suitable constraints with which thebehavioral/functional design 201, once physically formed into anintegrated circuit, must comply.

The EDA takes the behavioral/functional design 201 and the designconstraints 203 and performs a synthesis 205 to create a functionallyequivalent logic gate-level circuit description, such as a netlist. Thesynthesis 205 forms the functionally equivalent logic gate-level circuitdescription by matching the behavior and/or functions desired from thebehavioral/functional design 201 to standard cells from cell libraries206, which meet the design constraints 203.

The cell libraries 206 may include one or more individual celllibraries. Each of the individual cell libraries contains a listing ofpre-designed components, called cells, each of which may perform adiscrete logic function on a small scale. The cell is stored in theindividual cell libraries as information comprising internal circuitelements, the various connections to these circuit elements, apre-designed physical layout pattern that includes the height of eachcell along with the cells' designed power rails, dopant implants, wells,and the like. Additionally, the stored cell may also comprise a shape ofthe cell, terminal positions for external connections, delaycharacteristics, power consumption, and the like.

Once the synthesis 205 creates the functionally equivalent logicgate-level circuit description from the behavioral/functional design 201and the design constraints 203 by using one or more of the celllibraries 206, a place and route 213 is performed to create an actualphysical design for the overall structure. The place and route 213 formsthe physical design by taking the chosen cells from the cell libraries206 and placing them into cell rows (such as a first cell row 401 and asecond cell row 403, both of which are not illustrated in FIG. 2 butillustrated and described below with respect to FIG. 4A). The placementof each individual cell within the cell rows, and the placement of eachcell row in relation to other cell rows, may be guided by cost functionsin order to minimize wiring lengths and area desires of the resultingintegrated circuit. This placement may be done either automatically bythe place and route 213, or else may alternatively be performed partlythrough a manual process, whereby a user may manually insert one or morecells into a row.

After the initial placement of the individual cells within, e.g., thefirst cell row 401 and the second cell row 403, a post layout treatment215 is performed. In an embodiment the post layout treatment 215 is atreatment that occurs after the placement of the individual cells intothe first cell row 401 and the second cell row 403 and is a treatmentwhich analyzes the vias along the abutments between the individual cells(e.g., the abutment between a first cell 301 and a second cell 405, notillustrated in FIG. 2 but illustrated and discussed in FIGS. 3 and 4A,respectively, below) and modifies these vias along the abutment in orderto overcome restraints related to the physical limitations oflithography processes and which help generate a higher density cell. Thepost layout treatment 215 is described further below with respect toFIGS. 5A-13G.

Once a physical design layout has been generated by the place and route213 and the post layout treatment 215 has occurred, the physical designmay be sent to a manufacturing tool 217 to generate, e.g.,photolithographic masks, that may be used in the physical manufacture ofthe desired design. The physical design layout may be sent to themanufacturing tool 217 through that LAN/WAN 166 or other suitable formsof transmission from the EDA to the manufacturing tool 217.

Returning now to the place and route 213 and the post layout treatment215, FIG. 3 illustrates one embodiment of the first cell 301 that may bestored in the cell libraries 206. In an embodiment the first cell 301may be a cell that represents an inverter, with a first transistor 303and a second transistor 305 separated by, e.g., an isolation structure307 such as a shallow trench isolation (STI). Within the firsttransistor 303 is a first source region 309 and a first drain region311, while the second transistor 305 has a second source region 313 anda second drain region 315.

Additionally, as an inverter, the first transistor 303 and the secondtransistor 305 share a common gate electrode 317 (e.g., polysilicon orother conductive material) that extends over the isolation structure 307and separates the first source region 309 from the first drain region311 and also separates the second source region 313 from the seconddrain region 315. The gate electrode 317 has a gate dielectric (notseparately illustrated in FIG. 3) between the gate electrode 317 and theunderlying substrate (which encompasses the first source region 309, thefirst drain region 311, the second source region 313, and the seconddrain region 315).

In addition to the gate electrode 317, a first cell boundary conductor319, a second cell boundary conductor 321, a third cell boundaryconductor 318, and a fourth cell boundary conductor 320 may also belocated in a similar level (e.g., directly over the substrate) as thegate electrode 317. The first cell boundary conductor 319, the secondcell boundary conductor 321, the third cell boundary conductor 318, andthe fourth cell boundary conductor 320 are located along the outsideperimeter of the first cell 301 and are formed to provide a bias to thecell and assist in preventing cross-talk and interference betweenneighboring cells. The first cell boundary conductor 319, the secondcell boundary conductor 321, the third cell boundary conductor 318, andthe fourth cell boundary conductor 320 may be formed from a similarmaterial as the gate electrode 317 (e.g., polysilicon or otherconductive material).

To make electrical contact with e.g., a power rail 323 (located on afirst side of the first cell 301) or a ground rail 325 (located on asecond side of the first cell 301), contacts 327 may be formed over thefirst source region 309, the first drain region 311, the second sourceregion 313, and the second drain region 315. These contacts 327 allowfor the routing of electrical connections to the outer perimeter of thefirst cell 301 so that vias (described further below) can makeelectrical contact to the contacts 327 and the overlying conductivetraces (e.g., the power rail 323 or the ground rail 325).

The power rail 323 and the ground rail 325 are located in themetallization layers over the substrate and provide power and groundconnections for the first transistor 303 and the second transistor 305.The power rail 323 and the ground rail 325 (from the top down view ofFIG. 3) are located along a top and bottom edge, respectively, of thefirst cell 301. As such, when the first cell 301 is placed into a cellrow, e.g., the first cell row 401 (illustrated and described below withrespect to FIG. 4A), the power rail 323 and the ground rail 325 in thefirst cell 301 will align with power rails and ground rails in adjacentcells to form a continuous power rail and a continuous ground rail.

Vias may be formed to connect the various pieces of the first cell 301to the power rail 323 and the ground rail 325. For example, a first via329 may be formed to connect the power rail 323 with the first sourceregion 309 through one of the contacts 327. A second via 331 may beformed to connect the ground rail 325 with the second source region 313through another one of the contacts 327.

Additionally, a third via 332 may be formed to connect the first cellboundary conductor 319 to the power rail 323 and a fourth via 333 may beformed to connect the second cell boundary conductor 321 to the groundrail 325. By connecting the first cell boundary conductor 319 to anelectrical potential, the first cell boundary conductor 319 is betterable to prevent cross-talk and interference between neighboring cells.

Finally, there is illustrated in FIG. 3 a first metal-zero connection335 and a second metal-zero connection 337. These connections areconductive connections that run along the surface of the substrate. Forexample, the first metal-zero connection 335 may be in physical contactwith the first source region 309, with the contact 327 over the firstsource region 309, as well as by being in physical contact with thesecond cell boundary conductor 321. As such, the first metal-zeroconnection 335 provides an electrical connection between the power rail323 and the second cell boundary conductor 321. Similarly, the secondmetal-zero connection 337 provides an electrical connection between thefourth cell boundary conductor 320 and the ground rail 325.

FIG. 4A illustrates that the first cell 301 may be placed during theplace and route 213 into the first cell row 401. Additionally, a secondcell 405 may be placed in the first cell row 401 adjacent to the firstcell 301. In an embodiment the second cell 405 may be structurallysimilar to the first cell 301, such as by being a cell for an inverter.However, when placed adjacent to each other and in the same orientation,the first cell boundary conductor 319 of the first cell 301 (see FIG. 3)and the second cell boundary conductor 321 of the second cell 405 may bemerged into a fifth boundary conductor 407 and a sixth boundaryconductor 408 that separates the first cell 301 from the second cell405.

FIG. 4A also illustrates the placement of a third cell 409 and a fourthcell 411 into the second cell row 403, wherein the second cell row 403is an adjacent cell row to the first cell row 401. As such, the thirdcell 409 is adjacent to both the first cell 301 as well as the fourthcell 411. Additionally, the fourth cell 411 is adjacent to the thirdcell 409 and the second cell 405.

In an embodiment the third cell 409 and the fourth cell 411 may besimilar to the first cell 301, such that the first cell 301, the secondcell 405, the third cell 409 and the fourth cell 411 are all identicalto each other at this stage (with the first cell 301 and the second cell405 sharing the fifth boundary conductor 407 and the sixth boundaryconductor 408 along with the third cell 409 and the fourth cell 411sharing a seventh boundary conductor 413 and an eighth boundaryconductor 414.

FIG. 4B illustrates one of three areas of interest in FIG. 4A after theplace and route 213 has placed the first cell 301 and the second cell405 into the first cell row 401 and has placed the third cell 409 andthe fourth cell 411 into the second cell row 403. In the first area ofinterest (represented in FIG. 4A by the circle labeled 415), there aretwo vias (e.g., the second via 331 from the first cell 301 and the firstvia 329 from the third cell 409) that are adjacent to each other. Thesecond via 331 from the first cell 301 and the first via 329 from thethird cell 409 also connect to similar contacts 327, and connect to theground rail 325. In other words, in the first area of interest 415 thereare multiple vias that electrically connect the same structures togetherand are physically located in close proximity to each other.

FIG. 4C illustrates a second area of interest (represented in FIG. 4A bythe circle labeled 417), in which there are multiple sets of vias thatconnect the same structures. For example, in the second area of interest417, there are the fourth via 333 from the first cell 301, the secondvia 331 from the second cell 405, the third via 332 from the third cell409, and the first via 329 from the fourth cell 411. However, all ofthese vias provide a connection between the ground rail 325, thecontacts 327, the sixth boundary conductor 408 and the eighth boundaryconductor 414.

FIG. 4D illustrates a third area of interest (represented in FIG. 4A bythe circle labeled 419), in which there are another two vias (e.g., thefourth via 333 from the second cell 405 and the third via 332 from thefourth cell 411) that are adjacent to each other, connect to the thirdcell boundary conductor 318 in the second cell 405 and also connect tothe first cell boundary conductor 319 in the fourth cell 411.

FIGS. 5A-5D illustrate a layout of the first cell 301, the second cell405, the third cell 409, and the fourth cell 411 after the post layouttreatment 215 has been performed on the initial design. In particular,FIG. 5A illustrates an overview of the first cell 301, the second cell405, the third cell 409, and the fourth cell 411. Additionally, FIG. 5Billustrates an enlarged view of the first area of interest 415, FIG. 5Cillustrates an enlarged view of the second area of interest 417, andFIG. 5D illustrates an enlarged view of the third area of interest 419after the post layout treatment 215.

In an embodiment the post layout treatment 215 recognizes that themultiple vias located within the first area of interest 415, the secondarea of interest 417, and the third area of interest 419 may either becombined or else completely removed. For example, in the first area ofinterest 415, the second via 331 from the first cell 301 and the firstvia 329 from the third cell 409 may be combined or merged into a singlefifth via 501. Similarly, in the third area of interest 419, the fourthvia 333 from the second cell 405 and the third via 332 from the fourthcell 411 may be combined into a single sixth via 503. Finally, in thesecond area of interest 417, the second via 331 from the second cell 405and the first via 329 from the fourth cell 411 may be combined into asingle seventh via 505.

Additionally, because the sixth boundary conductor 408 is connected tothe contacts 327 through the second metal-zero connection 337 in thesecond cell 405, and because the eighth boundary conductor 414 isconnected to the contacts 327 through the first metal-zero connection335 in the fourth cell 411, the fourth via 333 in the first cell 301connected to the sixth boundary conductor 408 and the third via 332 inthe third cell 409 connected to the eighth boundary conductor 414 areredundant connections. As such, the fourth via 333 and the third via 332may be removed severing any electrical connections and withoutsignificant impact to the overall design.

Prior to performing the post layout treatment 215, the vias such as thefourth via 333 connected to the sixth boundary conductor 408 and thethird via 332 connected to the eighth boundary conductor 414 are in veryclose physical proximity to each other. In fact, as sizes are reduced,the distance between the vias may become so small that it is below theability of photolithographic processes to reliably obtain. However, byperforming the post layout treatment 215 to either combine vias or elseremove redundant vias, the overall design is simplified and the physicallimitations of the photolithography process are avoided, therebyallowing for a further reduction in size.

FIGS. 6A-6F illustrate views of alternate embodiments of the post layouttreatment 215 that may be performed within the second area of interest417 for various placements and orientations of the first cell 301, thesecond cell 405, the third cell 409, and the fourth cell 411. Forexample, in FIG. 6A, the first cell 301, the second cell 405, the thirdcell 409, and the fourth cell 411 are arranged such that the transistorslocated adjacent to each other each have a source region (represented inFIG. 6A by the letter “S”, wherein drain regions within FIGS. 6A-6F arerepresented by the letter “D”) located within the second area ofinterest 417. In this embodiment the second cell 405 and the fourth cell411 may be oriented as illustrated in FIG. 4A above, but the first cell301 and the third cell 409 may be rotated 180° within the first cell row401 and the second cell row 403.

In this embodiment, the post layout treatment 215 will start byanalyzing the first via 329 in the first cell 301 and the second via 331in the third cell 409. Once the post layout treatment 215 determinesthat the first via 329 in the first cell 301 and the second via 331 inthe third cell 409 both connect similar structures, the post layouttreatment 215 will combine and merge the first via 329 in the first cell301 and the second via 331 in the third cell 409 into a first slot via601.

The post layout treatment 215 will similarly analyze the second via 331in the second cell 405 and the first via 329 in the fourth cell 411.Once the post layout treatment 215 determines that the second via 331 inthe second cell 405 and the first via 329 in the fourth cell 411 connectsimilar structures, the post layout treatment 215 will combine these twovias into a second slot via 603.

FIG. 6B illustrates another embodiment in which the first cell 301, thesecond cell 405, and the fourth cell 411 are arranged as illustrated inFIG. 4A above, such that the third area of interest 419 comprises sourceregions from each of the second cell 405 and the fourth cell 411 and adrain region from the first cell 301. In this embodiment, however, thethird cell 409 is rotated 180° within the second cell row 403 such thatthe second area of interest 417 comprises a source region from the thirdcell 409.

In this embodiment the post layout treatment 215 will analyze the secondvia 331 within the third cell 409 to see if it interacts with any othervias to which it may be merged. However, because the contact 327 overthe drain in the first cell 301 does not have a via connecting to theground rail 325 or the power rail 323, there is no via to which the postlayout treatment 215 can merge the second via 331 within the third cell409. As such, the post layout treatment 215 will not modify the secondvia 331.

Additionally, the post layout treatment 215 will analyze the first via329 in the fourth cell 411 and the second via 331 in the second cell 405to see if they interact with each other. Because they do, the postlayout treatment 215 will merge the first via 329 in the fourth cell 411and the second via 331 in the second cell 405 into a third slot via 605.

The post layout treatment 215 will also analyze the fourth via 333 inthe first cell 301 and see that it is redundant. In particular, the postlayout treatment 215 will recognize that the third slot via 605 providesthe desired connections of the fourth via 333 through, e.g., the secondmetal-zero connection 337 of the second cell 405 and the firstmetal-zero connection 335 of the fourth cell 411. As such, the postlayout treatment 215 will remove the fourth via 333 from the design(represented in FIG. 6B by the unshaded box).

This analysis is also useful for other situations as illustrated in FIG.6B. For example, a similar analysis may be performed for when the secondarea of interest 417 comprises a source region from the first cell 301,a drain region from the second cell 405, a source region from the thirdcell 409, and a source region from the fourth cell 411. Similarly, asimilar analysis may be performed for when the cells are arranged suchthat the second area of interest 417 comprises a source region from eachone of the first cell 301, the second cell 405, and the third cell 409,and a drain region from the fourth cell 411, and also when the secondarea of interest 417 comprises source regions from each of the firstcell 301, the second cell 405, and the fourth cell 411, and a drainregion from the third cell 409.

FIG. 6C illustrates another embodiment in which the second area ofinterest 417 comprises a source region from the first cell 301, a drainregion from the second cell 405, a source region from the third cell409, and a drain region from the fourth cell 411. In this embodiment thepost layout treatment 215 will analyze the first via 329 in the firstcell 301 and the second via 331 in the third cell 409 to see if theyinteract. Because they do, the post layout treatment 215 will merge thefirst via 329 in the first cell 301 and the second via 331 in the thirdcell 409 into a fourth slot via 607.

Additionally, the post layout treatment 215 will analyze the third via332 in the second cell 405 and the fourth via 333 in the fourth cell 411to see if they interact with each other or with the first via 329 in thefirst cell 301 and the second via 331 in the third cell 409. Because thethird via 332 in the second cell 405 and the fourth via 333 in thefourth cell 411 are electrically connected to the second via 331 in thethird cell and the first via 329 in the first cell 301 (e.g., throughthe first metal-zero connection 335 and the second metal-zero connection337), the post layout treatment 215 will remove the third via 332 in thesecond cell 405 and the fourth via 333 in the fourth cell 411.

This embodiment is also useful for additional situations. For example,in an embodiment in which the second area of interest 417 comprises adrain from the first cell 301, a source from the second cell 405, adrain from the third cell 409, and a source from the fourth cell 411, asimilar analysis of merging and removing may be performed.

FIG. 6D illustrates another embodiment in which the second area ofinterest 417 comprises a drain from the first cell 301, a source fromthe second cell 405, a source from the third cell 409, and a drain fromthe fourth cell 411. In this embodiment the post layout treatment 215will analyze the second via 331 from the second cell 405 and the secondvia 331 from the third cell 409 and determine that there are no othervias with which to merge these vias. As such it will leave them alone.

Additionally, the post layout treatment 215 will analyze the fourth via333 in the first cell 301 and the fourth via 333 in the fourth cell 411.Because the fourth via 333 in the first cell 301 is electricallyconnected to the second via 331 in the second cell 405 (e.g., throughthe second metal-zero connection 337) and because the fourth via 333 inthe fourth cell 411 is electrically connected to the second via in thethird cell 409 (e.g., through the second metal-zero connection 337 inthe third cell), the fourth via 333 in the first cell 301 and the fourthvia 333 in the third cell 409 are removed from the design.

This embodiment as well is also useful for additional situations. Forexample, in an embodiment in which the second area of interest 417comprises a source from the first cell 301, a drain from the second cell405, a drain from the third cell 409, and a source from the fourth cell411, a similar analysis of removing may be performed.

FIG. 6E illustrates another embodiment of the post layout treatment 215performed when the second area of interest comprises a source from thefirst cell 301, a source from the second cell 405, a drain from thethird cell 409, and a drain from the fourth cell 411. In this embodimentthe post layout treatment 215 will analyze the first via 329 in thefirst cell 301, the second via 331 in the second cell 405, and the thirdvia 332 in the third cell 409 and determine that all of these interactwith each other. As such, one large via 609 that crosses into all of thecells may be used to replace the first via 329 in the first cell 301,the second via 331 in the second cell, and the third via 332 in thethird cell 409.

This embodiment is also useful for additional situations. For example,in an embodiment in which the second area of interest 417 comprises adrain from the first cell 301, a drain from the second cell 405, asource from the third cell 409, and a source from the fourth cell 411, asimilar analysis of merging the vias into one large via 609 may beperformed.

FIG. 6F illustrates yet another embodiment in which the post layouttreatment 215 is performed on a layout in which the second area ofinterest 417 comprises a source from the first cell 301, a drain fromthe second cell 405, a drain from the third cell 409, and a drain fromthe fourth cell 411. In this embodiment the post layout treatment 215will analyze the first via 329 in the first cell 301 and the third via332 in the third cell 409 and determine that they will interact. Assuch, the post layout treatment 215 will merge these two vias into an“L” shaped via 611.

Additionally, the post layout treatment 215 will also analyze the thirdvia 332 in the second cell 405. In its analysis, the post layouttreatment 215 will determine that the third via 332 in the second cell405 interacts with the third via 332 in the third cell 409 (through,e.g., the first metal-zero connection 335 in the first cell 301) and, assuch, is redundant. Accordingly, the post layout treatment 215 willremove the third via 332 in the second cell 405 from the design.

This embodiment is also useful for additional situations. For example,such an analysis may be used in embodiments in which the second area ofinterest 417 comprises a drain from the first cell 301, a source fromthe second cell 405, a drain from the third cell 409, and a drain fromthe fourth cell 411; in which the second area of interest 417 comprisesa drain from the first cell 301, a drain from the second cell 405, adrain from the third cell 409, and a source from the fourth cell 411;and in which the second area of interest 417 comprises a drain from thefirst cell 301, a drain from the second cell 405, a source from thethird cell 409, and a drain from the fourth cell 411.

FIGS. 7A through 7G begin to illustrate one embodiment of a step by stepprocess that may be used by the post layout treatment 215 to generatethe above described mergers and removals. Each of the different lettersin the Figures (e.g., 7A, 7B, 7C, etc.) represents differentcombinations for the second area of interest 417, with the differentcells being differentiated by the dashed lines. For example, FIG. 7Aillustrates the starting point wherein the second area of interest 417comprises a source from the first cell 301, a source from the secondcell 405, a source from the third cell 409, and a source from the fourthcell 411; FIG. 7B illustrates the starting point wherein the second areaof interest 417 comprises a drain from the first cell 301, a source fromthe second cell 405, a source from the third cell 409, and a source fromthe fourth cell 411; FIG. 7C illustrates the starting point wherein thesecond area of interest 417 comprises a drain from the first cell 301, asource from the second cell 405, a source from the third cell 409, and adrain from the fourth cell 411; FIG. 7D illustrates the starting pointwherein the second area of interest 417 comprises a drain from the firstcell 301, a source from the second cell 405, a drain from the third cell409, and a source from the fourth cell 411; FIG. 7E illustrates thestarting point wherein the second area of interest 417 comprises asource from the first cell 301, a source from the second cell 405, adrain from the third cell 409, and a drain from the fourth cell 411;FIG. 7F illustrates the starting point wherein the second area ofinterest 417 comprises a drain from the first cell 301, a drain from thesecond cell 405, a drain from the third cell 409, and a source from thefourth cell 411; and FIG. 7G illustrates the starting point wherein thesecond area of interest 417 comprises a drain from the first cell 301, adrain from the second cell 405, a drain from the third cell 409, and adrain from the fourth cell 411.

In an embodiment the process flow 1500 (summarized in process flowdiagram form below with respect to FIG. 15) starts with a first step1501 which places portions of a first marker layer 701, portions of asecond marker layer 702, and portions of a third marker layer 703 overthe design. The first marker layer 701, the second marker layer 702, andthe third marker layer 703 are not physical layers but instead representdesign layers that allow a user to determine (as described below) theinteractions around the various vias so that the vias can be analyzedfor mergers or removals. The placement of the portions of the firstmarker layer 701, the portions of the second marker layer 702, and theportions of the third marker layer 703 are performed by overlying (in atop down view) the portions of the first marker layer 701, the portionsof the second marker layer 702, and the portions of the third markerlayer 703 over their respective elements.

In an embodiment the first marker layer 701 is sized to be able toindicate an interaction between the vias within the first marker layer701 and vias within the second marker layer 702. In an embodiment thefirst marker layer 701 may be sized to have a first width W₁ of betweenabout 15 nm and about 25 nm, such as about 20 nm, and a first length L₁of between about 15 nm and about 25 nm. In a particular embodiment thefirst marker layer 701 has the first length L₁ of 20 nm and the firstwidth W₁ of 20 nm. However, any suitable dimensions may alternatively beused for the first marker layer 701.

The first marker layer 701 is placed over the via lands (e.g., where thevias contact the underlying structure) that are located on the gateelectrode 317, the first cell boundary conductor 319, the second cellboundary conductor 321, the third cell boundary conductor 318, and thefourth cell boundary conductor 320 under the power rail 323 and theground rail 325. For the sake of consistency and clarity, the groundrail 325 and the power rail 323 are not illustrated in FIGS. 7A-7G(although they can clearly be seen in FIG. 4A, for example), and theterminology of the first cell boundary conductor 319, the second cellboundary conductor 321, the third cell boundary conductor 318, and thefourth cell boundary conductor 320 is maintained to indicate which cellthey are located within even though these boundaries have already beenmerged during the placement of the first cell row 401 and the secondcell row 403.

Looking at the second area of interest 417 illustrated in FIG. 7A (withfour source regions located within the second area of interest 417),there are no via landings located on the gate electrode 317, the firstcell boundary conductor 319, the second cell boundary conductor 321, thethird cell boundary conductor 318, and the fourth cell boundaryconductor 320 under the power rail 323 and the ground rail 325. As such,there is no placement of the first marker layer 701 on any of thestructures within the second area of interest 417 in this configuration.

Looking at FIG. 7B, which has a single drain and three source regionslocated within the second area of interest 417, there is a single via(e.g., the fourth via 333 from the first cell 301) which is located onthe gate electrode 317, the first cell boundary conductor 319, thesecond cell boundary conductor 321, the third cell boundary conductor318, and the fourth cell boundary conductor 320 under the power rail 323and the ground rail 325. As such, the first marker layer 701 is placedover the fourth via 333.

Looking at FIG. 7C, which has a drain region, a source region, a sourceregion, and a drain region, there are two vias (e.g., the fourth via 333from the first cell 301 and the fourth via 333 from the fourth cell 411)which are located on the gate electrode 317, the first cell boundaryconductor 319, the second cell boundary conductor 321, the third cellboundary conductor 318, and the fourth cell boundary conductor 320 underthe power rail 323 and the ground rail 325. As such, a first one of thefirst marker layer 701 is placed on the fourth via 333 in the first cell301 and a second one of the first marker layer 701 is placed on thefourth via 333 in the fourth cell 411.

Looking at FIG. 7D, which has a drain region, a source region, a drainregion, and a source region, there are two vias (e.g., the fourth via333 from the first cell 301 and the third via 332 from the third cell409) which are located on the gate electrode 317, the first cellboundary conductor 319, the second cell boundary conductor 321, thethird cell boundary conductor 318, and the fourth cell boundaryconductor 320 under the power rail 323 and the ground rail 325. As such,a first one of the first marker layer 701 is placed on the fourth via333 in the first cell 301 and a second one of the first marker layer 701is placed on the third via 332 in the third cell 409.

Looking at FIG. 7E, which illustrates the second area of interest 417comprising a source region, a source region, a drain region, and a drainregion, there is a single via (e.g., the combined via from the third via332 in the third cell and the fourth via 333 in the fourth cell 411)which is located on the gate electrode 317, the first cell boundaryconductor 319, the second cell boundary conductor 321, the third cellboundary conductor 318, and the fourth cell boundary conductor 320 underthe power rail 323 and the ground rail 325. As such a single one of thefirst marker layer 701 is placed over the combined via from the thirdvia 332 in the third cell and the fourth via 333 in the fourth cell 411.

Looking at FIG. 7F, which illustrates the second area of interest 417with a drain region, a drain region, a drain region, and a sourceregion, there are two vias (e.g., the third via 332 in the third cell409 and the combined third via in the second cell 405 and fourth via 333in the first cell 301) which are located on the gate electrode 317, thefirst cell boundary conductor 319, the second cell boundary conductor321, the third cell boundary conductor 318, and the fourth cell boundaryconductor 320 under the power rail 323 and the ground rail 325. As such,a first one of the first marker layers 701 is placed over the third via332 in the third cell 409 and a second one of the first marker layers701 is placed over the combined third via in the second cell 405 andfourth via 333 in the first cell 301.

Looking at FIG. 7G, which illustrates the second area of interest 417with four drain regions, there are two vias (e.g., the combined fourthvia 333 in the first cell 301 and the third via 332 in the second cell405, and the combined third via 332 in the third cell 409 and fourth via333 in the fourth cell 411) which are located on the gate electrode 317,the first cell boundary conductor 319, the second cell boundaryconductor 321, the third cell boundary conductor 318, and the fourthcell boundary conductor 320 under the power rail 323 and the ground rail325. As such, a first one of the first marker layers 701 is placed overthe combined fourth via 333 in the first cell 301 and the third via 332in the second cell 405 and a second one of the first marker layers 701is placed over the combined third via 332 in the third cell 409 andfourth via 333 in the fourth cell 411.

Once the first marker layer 701 has been applied to the overall design,the second marker layer 702 is applied to the design. In an embodimentthe second marker layer 702 is sized such that the following analysiswill indicate an interaction between the vias overlaid by the firstmarker layer 701 and the vias overlaid by the second marker layer 702.In an embodiment the second marker layer 702 may be sized to have asecond width W₂ of between about 35 nm and about 45 nm, such as about 40nm, and a second length L₂ of between about 70 nm and about 90 nm. In aparticular embodiment the second marker layer 702 has the second lengthL₂ of 82 nm and the second width W₂ of 40 nm. However, any suitabledimensions may alternatively be used for the second marker layer 702.

The second marker layer 702 is placed over the via lands (e.g., wherethe vias contact the underlying structure) that are located over thefirst source region 309, the first drain region 311, the second sourceregion 313, and the second drain region 315 within the first cell 301,the second cell 405, the third cell 409, and the fourth cell 411. Forexample, looking at the second area of interest 417 illustrated in FIG.7A (with four source regions located within the second area of interest417), there are four vias (e.g., the first via 329 in the first cell301, the second via 331 in the second cell 405, the second via 331 inthe third cell 409, and the first via 329 in the fourth cell 411) thatare located on the first source region 309, the first drain region 311,the second source region 313, and the second drain region 315. As such,a first one of the second marker layer 702 is placed on the first via329 in the first cell 301, a second one of the second marker layer 702is placed on the second via 331 in the second cell 405, a third one ofthe second marker layer 702 is placed on the second via 331 in the thirdcell 409, and a fourth one of the second marker layer 702 is placed onthe first via 329 in the fourth cell 411.

Looking at FIG. 7B, which illustrates the second area of interest 417comprising a single drain and three source regions, there are three vias(e.g., the second via 331 in the second cell 405, the second via 331 inthe third cell 409, and the first via 329 in the fourth cell 411) thatare located on the first source region 309, the first drain region 311,the second source region 313, and the second drain region 315. As such afirst one of the second marker layer 702 is placed on the second via 331in the second cell 405, a second one of the second marker layer 702 isplaced on the second via 331 in the third cell 409, and a third one ofthe second marker layer 702 is placed on the first via 329 in the fourthcell 411.

Looking at FIG. 7C, which illustrates the second area of interest 417comprising a drain region, a source region, a source region, and a drainregion, there are two vias (e.g., the second via 331 in the second cell405 and the second via 331 in the third cell 409) that are located onthe first source region 309, the first drain region 311, the secondsource region 313, and the second drain region 315. As such a first oneof the second marker layer 702 is placed on the second via 331 in thesecond cell 405, and a second one of the second marker layer 702 isplaced on the second via 331 in the third cell 409.

Looking at FIG. 7D, which illustrates the second area of interest 417comprising a drain region, a source region, a drain region, and a sourceregion, there are two vias (e.g., the second via 331 in the second cell405 and the first via 329 in the fourth cell 411) that are located onthe first source region 309, the first drain region 311, the secondsource region 313, and the second drain region 315. As such a first oneof the second marker layer 702 is placed on the second via 331 in thesecond cell 405, and a second one of the second marker layer 702 isplaced on the first via 329 in the fourth cell 411.

Looking at FIG. 7E, which illustrates the second area of interest 417comprising a source region, a source region, a drain region, and a drainregion, there are two vias (e.g., the first via 329 in the first cell301 and the second via 331 in the second cell 405) that are located onthe first source region 309, the first drain region 311, the secondsource region 313, and the second drain region 315. As such a first oneof the second marker layer 702 is placed on the first via 329 in thefirst cell 301, and a second one of the second marker layer 702 isplaced on the second via 331 in the second cell 405.

Looking at FIG. 7F, which illustrates the second area of interest 417with a drain region, a drain region, a drain region, and a sourceregion, there is only one via (e.g., the first via 329 in the fourthcell 411) that is located on the first source region 309, the firstdrain region 311, the second source region 313, and the second drainregion 315. As such a first one of the second marker layer 702 is placedon the first via 329 in the fourth cell 411.

Looking at FIG. 7G, which illustrates the second area of interest 417with four drain regions, there are no vias that are located on the firstsource region 309, the first drain region 311, the second source region313, and the second drain region 315. As such, the second marker layer702 is not placed over any vias in FIG. 7G.

Once the first marker layer 701 and the second marker layer 702 havebeen placed upon their respective structures (as described above), thethird marker layer 703 is utilized to determine which of the structuresshould be further treated in the post layout treatment 215. In anembodiment the third marker layer 703 may be shaped as a square with athird length L₃ that is sufficient to indicate that closely related viasinteract with each other. In an embodiment the third length L₃ may bebetween about 70 nm and about 90 nm, such as about 82 nm. However, anyother suitable length may alternatively be utilized.

The third marker layer 703 is then placed over one of the portions ofthe first marker layer 701 or the second marker layer 702 that werepreviously placed. In the embodiment described in FIGS. 7A through 7G,the third marker layer 703 is placed such that the first marker layer701 located on the conductive cell boundaries are located within acenter of the third marker layer 703. However, any suitable placementmay alternatively be utilized.

Once in place, an analysis is performed in order to determine which onesof the first marker layer 701 and the second marker layer 702 arelocated within the third marker layer 703. Those that are co-locatedwithin the third marker layer 703 will be further analyzed. In otherwords, if there are two or more of the first marker layer 701 or thesecond marker layer 702, then those structures will be further analyzedtogether. Those that are not located within the third marker layer 703will not be further analyzed under this process.

In a second step 1502, an analysis is performed to identify those viasthat were previously overlaid by the first marker layer 701 and also hasan alternate route to the power rail 323 or the ground rail 325. In anembodiment each of the vias overlaid by the first marker layer 701 maybe expanded towards either the first metal-zero connection 335 or thesecond-metal zero connection 337 a first distance D₁. In an embodimentthe first distance D₁ is chosen such that there is not a deleteriouseffect from performing the post layout treatment 215, such as by beingless than about 50 nm, such as about 30 nm, although any suitabledistance may alternatively be chosen. If the expanded vias overlaid bythe first marker layer 701 extend to either the first metal-zeroconnection 335 or the second metal-zero connection 337, then there is analternate route to the power rail 323 or the ground rail 325, and thevia is redundant.

For example, looking at FIG. 7B (because FIG. 7A has no first markerlayer 701 portions), the first marker layer 701 in FIG. 7B is analyzedto determine if it is within the first distance D₁. While the width ofthe first cell row 401 is at least in part dependent upon the overalldesign, is continually shrinking with reduced technology, and in somecases may be between about 300 nm to about 500 nm, in an embodiment inwhich the first cell row 401 has a width of 360 nm, the first markerlayer 701 may be located 47 nm away from the second metal-zeroconnection 337 of the third cell 409 and the first metal-zero connection335 of the fourth cell 411. As such, the first marker layer 701 in FIG.7B may be removed as described further below with respect to FIGS.13A-13G. Looking at FIGS. 7C-7F, a similar analysis is performed andthose portions of the first marker layer 701 that are within the firstdistance D₁ of one of the first metal-zero connection 335 or the secondmetal-zero connection 337 in the first cell 301, the second cell 405,the third cell 409, and the fourth cell 411 are analyzed to determine ifthey may be removed.

However, in FIG. 7G, the portions of the first marker layer 701 are notwithin the first distance D₁ of one of the first metal-zero connection335 or the second metal-zero connection 337 in the first cell 301, thesecond cell 405, the third cell 409, and the fourth cell 411. Inparticular, when there are four drain regions within the second area ofinterest 417, all of the first metal-zero connections 335 or the secondmetal-zero connections 337 in the first cell 301, the second cell 405,the third cell 409, and the fourth cell 411 are located further awaythan the first distance D₁. As such, the portions of the first markerlayer 701 are not chosen for removal.

FIGS. 8A-8G illustrate a third step 1503, in which the vias overlaid bythe first marker layer 701 that may be merged with the vias overlaid bythe second marker layer 702 are identified. In an embodiment each of thevias overlaid by the second marker layer 702 are expanded to form anexclusion zone 801. For example, in the embodiment illustrated in FIG.8E, the first via 329 in the first cell 301 and the second via 331 inthe second cell 405 are expanded to form the exclusion zone 801.

In an embodiment the first via 329 in the first cell 301 and the secondvia 331 in the second cell 405 may be expanded horizontally (e.g., in afirst direction 803 parallel with the first cell row 401) a seconddistance D₂ sized to indicate an interaction between the vias overlaidby the first marker layer 701 and the vias overlaid by the second markerlayer 702. In an embodiment in which there is a 63 nm pitch between theportions of the second marker layer 702, the first via 329 in the firstcell 301 and the second via 331 in the second cell 405 may be expandedhorizontally the second distance D₂ of between about 40 nm and about 50nm, such as about 43 nm. Alternatively, in an embodiment in which thereis a 66 nm pitch between the vias overlaid by the second marker layer702, the second distance D₂ may be about 46 nm.

Additionally, the first via 329 in the first cell 301 and the second via331 in the second cell 405 may be expanded vertically (e.g., in a seconddirection 805 perpendicular with the first cell row 401) a thirddistance D₃. In an embodiment the third distance D₃ may be set asone-half of a distance between the vias in the vertical direction. Forexample, in the embodiment illustrated in FIG. 8E, in which the secondvia 331 in the second cell 405 and the first via 329 in the fourth cell411 are separated from each other by 2 nm, the third distance D₃ may beset to 1 nm. As such, while the third distance D₃ will be at leastpartially set by the initial design and placement, in some embodimentsthe third distance D₃ may be between about 0 nm and about 5 nm, such asabout 1 nm. However, any suitable distance may be utilized to form theexclusion zone 801.

Continuing with the embodiment illustrated in FIG. 8E, once theexclusion zone has been created by the expansion of the first via 329 inthe first cell 301 and the second via 331 in the second cell 405, thosevias identified by the first marker layer 701 that remain outside of theexclusion zone are identified for further merging. In the embodimentillustrated in FIG. 8E, the combined via from the third via 332 in thethird cell 409 and the fourth via 333 in the fourth cell 411 isidentified.

Additionally, in the embodiment of FIG. 8G, there are no vias identifiedby the second marker layer 702. As such, the vias identified by thefirst marker layer 701 are outside of any exclusion zone 801 (sincethere are no exclusion zone 801). Accordingly, the vias identified bythe first marker layer 701 are chosen for merging.

Following a similar procedure in the embodiment illustrated in FIG. 8F,only the combined via from the fourth via 333 in the first cell 301 andthe third via 332 in the second cell 405 is identified as being outsideof the exclusion zone 801 generated by the expansion of the first via329 in the fourth cell 411. The first marker layer 701 over the thirdvia 332 in the third cell 409 is contacted by the exclusion zone 801 andis not identified as being outside of the exclusion zone 801.Additionally, in the embodiment illustrated in FIG. 8A, there are novias identified by the first marker layer 701. In the remainder of theembodiments illustrated in FIGS. 8B-8D, all of the vias are locatedwithin the exclusion zones generated and, as such, these vias are notchosen for merging. For example, in the embodiment illustrated in FIG.8B, in which the first marker layer 701 on the fourth via 333 in thefirst cell 301 is located only 11.5 nm from the second via 331 in thesecond cell 405 (for an embodiment in which there is a 63 nm pitchbetween the portions of the second marker layer 702) or 13 nm in whichthere is a 66 nm pitch between the portions of the second marker layer702, the exclusion zone 801 makes contact with first marker layer 701and, as such, these vias are not chosen for merging.

Once the vias have been identified, the exclusion zones 801 havecompleted their purpose at this time. As such, in an embodiment theexclusion zones 801 are removed from the overall design. The vias whichwere used to form the exclusion zones 801 are returned to their originalsize.

FIGS. 9A-9G illustrate a fourth step 1504 in the process in which thosevias identified in the third step 1403 (described above) are expanded inthe first direction 803 parallel with the first cell row 401 to formfirst expansion zones 901. Looking at the embodiment illustrated in FIG.9G, in this step the vias identified in the third step 1403 (e.g., thecombined via from the third via 332 in the second cell 405 and fourthvia 333 in the first cell 301 and the combined via from the third via332 in the third cell 409 and the fourth via 333 in the fourth cell 411)are each expanded in the first direction 803 parallel with the firstcell row 401 a fourth distance D₄ of between about 25 nm and about 35nm, such as about 31.5 nm.

For example, in an embodiment the size of the fourth distance D₄ may bedetermined by the pitch of the poly, the via size, and the locations. Asan example, in the embodiment illustrated in FIG. 9E, in which the vialands on the poly (e.g., the combined third via 332 in the third cell409 and the fourth via 333 in the fourth cell 411), are located on thecenter of the combined third cell boundary conductor 318 in the fourthcell 411 and the first cell boundary conductor 319 in the third cell409. In this embodiment the fourth distance D₄ may be set to one-half ofthe pitch between, e.g., the first cell boundary conductor 319 in thethird cell 409 and the gate electrode 317 in the third cell 409. Assuch, in an embodiment in which the pitch between two polysiliconregions is 63 nm, the fourth distance D₄ may be set to 31.5 nm.Alternatively, in an embodiment in which the pitch is 66 nm, the fourthdistance D₄ may be set to 33 nm. However, any other suitable distancemay alternatively be utilized.

Similarly, in the embodiment illustrated in FIG. 9F, the combined viafrom the third via in the second cell 405 and the fourth via 333 in thefirst cell 301 (the via identified in the third step 1403) is alsoexpanded in the first direction 803 parallel with the first cell row 401the fourth distance D₄ to form the first expansion zone 901.Additionally, in the embodiment illustrated in FIG. 9E, the combined viafrom the fourth via 333 in the fourth cell 411 and the third via 332 inthe third cell 409 (the via identified in the third step 1403) isexpanded in the first direction 803 parallel with the first cell row 401by the fourth distance D₄.

FIGS. 9A-9G also illustrate a fifth step 1505 in the process in whichthose vias identified in the third step 1403 (described above) are alsoexpanded in a third direction 906 opposite the first direction 803 andparallel with the first cell row 401 to form a second expansion zone904. Looking at the embodiment illustrated in FIG. 9G, in this step thevia identified in the third step 1403 (e.g., the combined via from thefourth via 333 in the first cell 301 and the third via 332 in the secondcell 405 and also the combined via from the third via 332 in the thirdcell 409 and the fourth via 333 in the fourth cell 411) are eachexpanded in the third direction 906 opposite the first direction 803 andparallel with the first cell row 401 a fifth distance D₅ of betweenabout 25 nm and about 35 nm, such as about 31.5 nm. However, anysuitable distance may alternatively be utilized.

Similarly, in the embodiment illustrated in FIG. 9F, the combined viafrom the third via 332 in the second cell 405 and the fourth via 333 inthe first cell 301 (the via identified in the third step 1403) is alsoexpanded in the third direction 906 opposite the first direction 803 andparallel with the first cell row 401 the fifth distance D₅ to form thesecond expansion zone 904. Additionally, in the embodiment illustratedin FIG. 9E, the combined via from the third via 332 in the third cell409 and the fourth via 333 in the fourth cell 411 (the via identified inthe third step 1403) is expanded in the third direction 906 opposite thefirst direction 803 and parallel with the first cell row 401 by thefifth distance D₅.

FIGS. 10A-10G illustrate a sixth step 1506 in which the via landsoverlaid by the second marker layer 702 are extended in the seconddirection 805 perpendicular to the first cell row 401 to form thirdexpansion zones 907 and, in a seventh step 1507, also extended in afourth direction 905 opposite the second direction 805 and perpendicularto the first cell row 401 to form fourth expansion zones 909. Looking atthe embodiment illustrated in FIG. 10A, each of the vias identified bythe second marker layer 702 (e.g., the first via 329 in the first cell301, the second via 331 in the second cell 405, the second via 331 inthe third cell 409, and the first via 329 in the fourth cell 411) areexpanded in the second direction 805 by a sixth distance D₆ of betweenabout 15 nm and about 25 nm, such as about 21 nm. Similarly, the firstvia 329 in the first cell 301, the second via 331 in the second cell405, the second via 331 in the third cell 409, and the first via 329 inthe fourth cell 411 are also expanded in the fourth direction 905 by aseventh distance D₇ of between about 15 nm and about 25 nm, such asabout 21 nm. However, any suitable distances may alternatively beutilized.

Looking at FIG. 10B, the second via 331 in the second cell 405, thesecond via 331 in the third cell 409, and the first via 329 in thefourth cell 411 (those vias identified by the second marker layer 702)are also expanded in the second direction 805 and the fourth direction905. Looking at FIG. 10C, the second via 331 in the second cell 405 andthe second via 331 in the third cell 409 (those vias identified by thesecond marker layer 702) are also expanded in the second direction 805and the fourth direction 905. Looking at FIG. 10D, the second via 331 inthe second cell 405 and the first via 329 in the fourth cell 411 (thosevias identified by the second marker layer 702) are also expanded in thesecond direction 805 and the fourth direction 905. Looking at FIG. 10E,the first via 329 in the first cell 301 and the second via 331 in thesecond cell 405 (those vias identified by the second marker layer 702)are also expanded in the second direction 805 and the fourth direction905. Finally, looking at FIG. 10F, the first via 329 in the fourth cell411 (the via identified by the second marker layer 702) is also expandedin the second direction 805 and the fourth direction 905.

FIGS. 10A-10G also illustrate an eighth step 1508 in the process inwhich interactions between the expanded vias are analyzed. For example,in the embodiment illustrated in FIG. 10E, the combined via from thethird via 332 in the third cell 409 and the fourth via 333 in the fourthcell 411 (which has been expanded in both the first direction 803 andthe third direction 906) is analyzed to determine whether it interactswith any of the vias identified by the second marker layer 702 andexpanded in the sixth step 1506 or the seventh step 1507. In anembodiment the interaction may be seen by determining whether theexpanded combined via from the third via 332 in the third cell 409 andthe fourth via 333 in the fourth cell 411 overlaps with either theexpanded first via 329 in the first cell 301 and the expanded second via331 in the second cell 405. In other words, the vias interact if any ofthe expansion zones (e.g., the first expansion zone 901, the secondexpansion zone 904, the third expansion zone 907, or the fourthexpansion zone 909) overlap.

In an embodiment, the eighth step 1508 may be broken down into a seriesof sub-steps. For example, in a first sub-step, the expansions of thefourth step 1504 (e.g., the first expansion zones 901) are analyzed todetermine if they interact with the expansions of the sixth step 1506(e.g., the third expansion zones 907). Additionally, the expansions fromthe fourth step 1504 (e.g., the first expansion zones 901) are analyzedto determine if they interact with the expansions from the seventh step1507 (e.g., the fourth expansion zones 909).

In a second sub-step the expansions of the fifth step 1505 (e.g., thesecond expansion zones 903) are analyzed to determine if they interact(e.g., overlap) the expansions of the sixth step 1506 (e.g., the thirdexpansion zones 907). Similarly, the expansions of the fifth step 1505(e.g., the second expansion zones 903) are analyzed to determine if theyinteract with the expansions of the seventh step 1507 (e.g., the fourthexpansion zones 909).

In a third sub-step the expansions of the sixth step 1506 (e.g., thethird expansion zones 907) are analyzed to determine if they interact(e.g., overlap) with the expansions of the fourth step 1504 (e.g., thefirst expansion zones 901). Similarly, the expansions of the sixth step1506 (e.g., the third expansion zones 907) are analyzed to determine ifthey interact with the expansions of the fifth step 1505 (e.g., thesecond expansion zones 903).

In a fourth sub-step the expansions of the seventh step 1507 (e.g., thefourth expansions zones 909) are analyzed to determine if they interactwith the expansions of the fourth step 1504 (e.g., the first expansionzones 901). Similarly, the expansions of the seventh step 1507 (e.g.,the fourth expansions zones 909) are analyzed to determine if theyinteract with the expansions of the fifth step 1505 (e.g., the secondexpansion zones 903).

FIG. 10F illustrates this analysis performed on the combined via fromthe third via 332 in the second cell 405 and the fourth via 333 in thefirst cell 301. In particular, the combined via from the third via 332in the second cell 405 and the fourth via 333 in the first cell 301 isanalyzed for interactions with, e.g., the first via 329 in the fourthcell 411 by determining whether the first expansion zone 901 from thecombined via from the third via 332 in the second cell 405 and thefourth via 333 in the first cell 301 overlaps with the third expansionzone 907 from the first via 329 in the fourth cell 411. As illustratedin FIG. 10F, they do.

A similar process is carried out in the remaining embodiments. Inparticular, in the embodiments of the remaining figures not previouslydiscussed (FIGS. 10A-10D and 10G), each of the vias (as expanded) areindividually analyzed. However, in these embodiments there are nointeractions between the various expansion zones.

FIGS. 11A-11G illustrate a ninth step 1509 in which merged via shapesare identified based off of the interactions identified in the eighthstep 1508. For example, in an embodiment in which the first sub-step,the second sub-step, the third sub-step, or the fourth sub-stepidentifies an interaction (as described above), the vias and theiroverlapping expansion regions form an “L” shape 1101. However, themerged via shapes are not

For example, in the embodiment illustrated in FIG. 11F, both the firstsub-step and the third sub-step identify that there is an interaction.In particular, the first sub-step analyzes whether there is aninteraction (e.g., overlap) between the expansions of the fourth step1504 (e.g., the first expansion zones 901) and the expansion of thesixth step 1506 (e.g., the third expansion zones 907). As there is, an“L” shape 1101 is generated, wherein the “L” shape 1101 comprises theinteracting vias along with the interacting expansion zones. In theembodiment illustrated in FIG. 11F, the “L” shape comprises the firstvia 329 in the fourth cell 411, the third expansion zone 907 from thefirst via 329 in the fourth cell 411, the first expansion zone 901 fromthe combined via from the third via 332 in the second cell 405 and thefourth via 333 in the first cell 301, along with the combined via fromthe third via 332 in the second cell 405 and the fourth via 333 in thefirst cell 301.

Similarly, looking in FIG. 11E, a similar analysis is performed in theninth step 1509. For example, looking back at the embodiment illustratedin FIG. 10E, the analysis determines that there is an interactionbetween the expansion in the fourth step 1504 (e.g., the first expansionzones 901) and the expansion in the seventh step 1507 (the fourthexpansion zones 909). Additionally, there is an interaction between theexpansion in the fifth step 1505 (e.g., the second expansion zones 903)and the expansion of the seventh step 1507 (e.g., the fourth expansionzones 909). As such, there are multiple “L” shapes 1101 that aregenerated, with one of the “L” shapes 1101 overlapping another one ofthe “L” shapes 1101 combined via from the combined via from the thirdvia 332 in the third cell 409 and the fourth via 333 in the fourth cell411.

FIGS. 12A-12G illustrate a tenth step 1510 to determine if any of thecombined shapes (e.g., the “L” shapes 1101) interact with each other.For example, in the embodiment illustrated in FIG. 12E, there are two ofthe “L” shapes 1101 that are analyzed to determine if they interact,such as by overlapping each other. In this embodiment there are two “L”shapes 1101 that overlap over the combined via from the third via 332 inthe third cell 409 and the fourth via 333 in the fourth cell 411.

If there are multiple shapes, such as the “L” shapes 1101 illustrated inFIG. 12E, that are determined to interact, an additional step may betaken to make the processing (e.g., photolithographic masking andetching) simpler by merging the multiple shapes into a single shape1201. In the embodiment illustrated in FIG. 12E, the two “L” shapes 1101may be merged into the single shape 1201 and any areas that aresurrounded by the two “L” shapes 1101 may be filled in. For example, thetwo “L” shapes 1101 may be merged together and then filled in to form asingle shape 1201 which is rectangular (although the two “L” shapes 1101have been left within FIG. 12E for clarity).

Once this merging process has been finished, the first expansion zone901, the second expansion zone 903, the third expansion zone 907, andthe fourth expansion zone 909 are removed from the design. By removingthe first expansion zone 901, the second expansion zone 903, the thirdexpansion zone 907, and the fourth expansion zone 909, the vias thatwere not merged are returned to their normal shapes for furtheranalysis.

FIGS. 13A-13G illustrate an eleventh step 1511 in which vias identifiedby the second marker layer 702 (that were not merged in the tenth step1510) are either left alone, merged together, or removed completely. Inan embodiment the eleventh step 1511 may be initiated by first expandingthe vias identified by the second marker layer 702 in the seconddirection 805 by an eight distance D₈ to form fifth expansion zones 1301and also expanding the vias identified by the second marker layer 702 inthe fourth direction 905 by a ninth distance D₉ to form sixth expansionzones 1303. In an embodiment the eighth distance D₈ may be between about0 nm and about 5 nm, such as about 1 nm, while the ninth distance D₉ maybe between about 0 nm and about 5 nm, such as about 1 nm.

For example, in the embodiment illustrated in FIG. 13A, each of thefirst via 329 in the first cell 301, the second via 331 in the secondcell 405, the second via 331 in the third cell 409, and the first via329 in the fourth cell 411 are all expanded in the second direction 805and the fourth direction 905. As the fifth expansion zone 1301 from thefirst via 329 in the first cell 301 overlaps or connects to the sixthexpansion zone 1304 from the second via 331 in the third cell 409, thisexpansion will close the gap between the first via 329 in the first cell301 and the second via 331 in the third cell 409 and the first via 329in the first cell 301 and the second via 331 in the third cell 409 aremerged. Similarly, the gap between the second via 331 in the second cell405 and the first via 329 in the fourth cell 411 is also closed and thesecond via 331 in the second cell 405 and the first via 329 in thefourth cell 411 are merged. In an embodiment in which the second via 331in the second cell 405 is 20 nm×40 nm and the first via 329 in thefourth cell 411 is also 20 nm×40 nm, the new merged cell is 20 nm×82 nm.

Looking at the embodiment illustrated in FIG. 13B, the second via 331 inthe second cell 405, the second via 331 in the third cell 409, and thefirst via 329 in the fourth cell 411 are all expanded by the eighthdistance D₈ and the ninth distance D₉. As such, the gap between thesecond via 331 in the second cell 405 and the first via 329 in thefourth cell 411 is closed and the second via 331 in the second cell 405and the first via 329 in the fourth cell 411 are merged.

Looking at the embodiment illustrated in FIG. 13C, the second via 331 inthe second cell 405 and the second via 331 in the third cell 409 areexpanded by the eighth distance D₈ and the ninth distance D₉. However,because there are no gaps to close, the second via 331 in the secondcell 405 and the second via 331 in the third cell 409 are merelyexpanded without merging.

Looking at the embodiment illustrated in FIG. 13D, the second via 331 inthe second cell 405 and the first via 329 in the fourth cell 411 areexpanded by the eighth distance D₈ and the ninth distance D₉. As such,the gap located between the second via 331 in the second cell 405 andthe first via 329 in the fourth cell 411 is closed, and the second via441 in the second cell 405 and the first via 329 in the fourth cell 411are merged into a single via.

FIGS. 13A-13G also illustrate a twelfth step 1512 in which the redundantand unnecessary vias identified by the first marker layer 701 areremoved. In an embodiment the removal is performed by shrinking the viasa distance that is greater than the size of the original vias. Forexample, in an embodiment in which the original vias had a size of 20 nmby 40 nm, the vias may be sized in the second direction 805 or thefourth direction 905 by reducing the size of the vias by 20 nm. As such,any vias that were not merged and remain their original size areeffectively removed from the overall design.

Additionally in the twelfth step 1412, after the removal of the vias,the remaining vias (those that were merged and, as such, have a largersize than they originally did), are expanded by the same distance inorder to return them to the size prior to the twelfth step 1412. Assuch, the twelfth step 1412 will remove vias that were not merged andare redundant, but will return the other vias back to their originalsize.

As an example, in the embodiment illustrated in FIG. 13B, the fourth via333 in the first cell 301 (see, e.g., FIG. 12B) is reduced in size byits original size. For example, if the fourth via 333 in the first cell301 has an original size of 20 nm, the fourth via 333 in the first cell301 is reduced by at least 20 nm, effectively removing the fourth via333 in the first cell 301 from the design.

However, still looking at the embodiment illustrated in FIG. 13B, themerged second via 331 in the second cell 405 and the first via 329 inthe fourth cell 411 will be shrunk by at least 20 nm. However, becausethese vias have already been merged, the shrinking does not remove themerged second via 331 in the second cell 405 and the first via 329 inthe fourth cell 411. Then, when the expansion is performed, the mergedsecond via 331 in the second cell 405 and the first via 329 in thefourth cell 411 will return to its original size.

Similar processing may be performed to remove the second via fourth via333 in the first cell 301 and the third via 332 in the third cell 409 inthe embodiment in FIG. 13D. Additionally, in the embodiment illustratedin FIG. 13C, the twelfth step 1412 may be used to remove the fourth via333 in the first cell 301 and the fourth via 333 in the fourth cell 411.

FIGS. 14A-14G illustrate a thirteenth step 1513, which will resize themerged vias back to their original size after the closing of the gaps inthe twelfth step 1412. In an embodiment the merged vias may be reducedby the same distance as they were expanded during the merge, while stillretaining the merged portion of the vias. As such, in an embodiment inwhich the twelfth step 1512 used an expansion of 1 nm in the thirddirection 906 and the fourth direction 905, the thirteenth step 1513reduces the size of the merged vias by 1 nm in the second direction 805and the fourth direction 905. However, any suitable reduction in sizemay alternatively be utilized.

For example, in the embodiment illustrated in FIG. 14A, the merged vias(from the merged via from the first via 329 in the first cell 301 andthe second via 331 in the third cell 409 and the merged via from thesecond via 331 in the second cell 405 and the first via 329 in thefourth cell 411) will be reduced in size back to their original size. Ina particular embodiment in which the merged via is 20 nm×82 nm, thisreduction will return the via back to 20 nm×80 nm.

Similarly, the merged via in the embodiment illustrated in FIG. 11B (themerged via from the second via 331 in the second cell 405 and the secondvia 331 in the third cell 409) and the merged via in the embodimentillustrated in FIG. 11D (the merged via from the second via 441 in thesecond cell 405 and the first via 329 in the fourth cell 411) may alsobe reduced in size back to their original size. However, the mergedportion of the vias are retained (as represented in FIG. 14A by themerged portion 1401 highlighted by the dashed line)

FIGS. 14A-14G also illustrate with the thirteenth step 1513 that theconsolidated vias are incorporated into the design of the first cell301, the second cell 405, the third cell 409, and the fourth cell 411.For example, the consolidated vias that have been merged or otherwisemodified by the post layout treatment 215 are fully incorporated backinto the overall design.

Additionally, at this stage, once the consolidated vias are incorporatedback into the design, the first marker layer 701, the second markerlayer 702, and the third marker layer 703 may be removed. By thisremoval, the first marker layer 701, the second marker layer 702, andthe third marker layer 703 are not incorporated into the final design,although they were utilized to help determine the final design.

FIG. 15 illustrates a process flow 1500 for one embodiment of the postlayout treatment 215 as described above with respect to FIGS. 7A-14G. Inthe first step 1501, the first marker layer 701, the second marker layer702, and the third marker layer 703 are placed. In the second step 1502the vias identified by the second marker layer 702 are analyzed todetermine if there is an alternate route to the power rail 323 or theground rail 325. In the third step 1503 an identification of viasoverlaid by the first marker layer 701 that may be merged with viasidentified by the second marker layer 72 are identified.

In the fourth step 1504 the first expansion zones 901 are generated, andin the fifth step 1505 the second expansion zones 903 are generated.Additionally, in the sixth step 1506 the third expansion zones 907 aregenerated and, in the seventh step 1507 the fourth expansion zones 909are generated. In the eighth step 1508 the expansion zones are analyzed.In the ninth step 1509 shapes are identified from the expansion zones.In the tenth step 1510 the shapes are merged together.

In the eleventh step 1511, the remaining vias are sized to merge thevias. In the twelfth step 1512 the vias are sized in order to remove thevias that are redundant. In the thirteenth step 1513, the vias areresized and incorporated into the design, and the marker layers (e.g.,the first marker layer 701, the second marker layer 702, and the thirdmarker layer 703) are removed.

By performing the post layout treatment 215 as described above,congestion around the abutments of the cells may be alleviated such thatthe congestion does not prevent further shrinking of the overall design,while still maintaining the electrical connections to the cell boundaryconductors that help to prevent interference between neighboring cells.As such, the post layout treatment 215 allows an additional poly pitch(that had been introduced) to be avoided, for a more efficient process.

FIGS. 16A-24 illustrate another embodiment of the post layout treatment215 which performs the treatment on cell layouts in which the vias mayactually extend across the power rails 323 and/or ground rails 325, suchthat, when the individual cells are placed within the cell rows (e.g.,the first cell row 401 and the second cell row 403), the vias may extendinto the adjoining cell. For example, in looking at the embodimentillustrated in FIG. 16A, the first via 329 in the first cell 301 extendsacross the ground rail 325 and, as such, actually extends across thecell boundary of the first cell 301 and into the third cell 409.Similarly, the second via 331 in the third cell 409 will also extendacross the cell boundary of the third cell 409 such that the second via331 in the third cell 409 will overlap with the first via 329 in thefirst cell 301. Additionally, looking at the second cell 405 and thefourth cell 411, the second via 331 in the second cell 405 and the firstvia 329 in the fourth cell 411 will also overlap when the individualcells are placed in to the cell rows.

In one embodiment, in order to perform the post layout treatment 215 onsuch a layout, the first step 1501 is performed as discussed above withrespect to FIG. 7A-7G by placing portions of the first marker layer 701,portions of the second marker layer 702, and portions of the thirdmarker layer 703 over the design. Additionally, the second step 1502 mayalso be performed to identify those vias that were previously overlaidby the first marker layer 701 and also has an alternate route to thepower rail 323 or the ground rail 325.

FIGS. 17A-17G illustrate a modified third step 1503′ that takes intoaccount the vias that extend across the cell boundaries. In particular,with regards to those vias that extend across the cell boundaries, thesevias are reduced in size such that they no longer cross the boundarybetween the cells. In the embodiment illustrated in FIG. 17A, the firstvia 329 in the first cell 301 is reduced in size by a distance to bringit either back to or back across the boundary of the first cell 301. Ina particular embodiment in which the first via 329 has a verticaldimension of 46 nm and extends 9 nm across into the third cell 409, thefirst via 329 is reduced in size by 9 nm to a vertical dimension of 37nm, such that the first via 329 is within the first cell 301.

Similarly, looking at the embodiment illustrated in FIG. 17B, the secondvia 331 in the third cell 409, the second via 331 in the second cell405, and the first via 329 in the fourth cell 411 are reduced in sizesuch that the vias do not extend across the cell boundary. Looking atthe embodiment illustrated in FIG. 17C, the second via 331 in the secondcell 405 and the second via 331 in the third cell 409 are reduced insize. Looking at the embodiment illustrated in FIG. 17D, the second via331 in the second cell 405 and the first via 329 in the fourth cell 411are reduced in size. Looking next at the embodiment illustrated in FIG.17E, the first via 329 in the first cell 301 and the second via 331 inthe second cell 405 are reduced in size. Finally, looking at theembodiment illustrated in FIG. 17F, the first via 329 in the fourth cell411 is reduced in size.

Once the various vias have been reduced in size, the remainder of themodified third step 1503 may be performed as described above withrespect to FIGS. 8A-8G. In particular, the vias overlaid by the firstmarker layer 701 that may be merged with the vias overlaid by the secondmarker layer 702 are identified by forming the exclusion zones 801.

FIGS. 18A-18G illustrate the fourth step 1504 and the fifth step 1505.In particular, those vias identified in the third step 1503 are expandedin the first direction 803 and the third direction 906. In an embodimentthe fourth step 1504 and the fifth step 1505 may be performed asdescribed above with respect to FIGS. 9A-9G.

FIGS. 19A-19G illustrate the sixth step 1506 and the seventh step 1507,in which the via lands overlaid by the second marker layer 702 areextended in the second direction 805 and also extended in the fourthdirection 905 in order to form the third expansion zones 907 and thefourth expansion zones 909 to determine the interaction between theexpanded vias. However, because the vias that originally extended acrossthe cell boundaries have already been reduced, those particular vias areexpanded a different amount than the remainder of the vias.

For example, looking at the embodiment illustrated in FIG. 19A, thefirst via 329 in the first cell 301 may be expanded in both the seconddirection 805 and the fourth direction 905 a distance that is less thanthe other vias, such as by being expanded 13 nm in order to form thethird expansion zones 907 and the fourth expansion zones 909(represented in FIGS. 19A-19G by the dashed boxes). Additionally, theremaining vias are expanded by a larger amount, such as by 23 nm.

FIGS. 19A-19G also illustrate the eighth step 1508 in which theinteractions between the expanded vias are analyzed. In particular, theinteractions are determined by whether the expanded vias overlap eachother after their expansions. In an embodiment the eighth step 1508 maybe performed as described above with respect to FIGS. 10A-10G, with afew modifications. In particular the first sub-step and the secondsub-step may be performed as described above with respect to FIGS.10A-10G.

The third sub-step and the fourth sub-step, however, are modified inorder to accommodate the original vias that needed to be reduced insize. In particular, looking first at the third sub-step, those viasoriginally expanded in the first direction 803 (within the fourth step1504) and the third direction 906 (in the fifth step 1505) are reducedin size by an amount such that the vias do not always interact. In anembodiment the vias originally expanded in the first direction may bereduced by an amount such as 8 nm. Once the vias have been reduced, theinteractions may be determined as described above.

In the fourth sub-step, those vias originally expanded in the firstdirection 803 (within the fourth step 1504) and the third direction 906(in the fifth step 1505) are reduced in size by an amount such that thevias do not always interact. In an embodiment the vias originallyexpanded in the first direction may be reduced by an amount such as 8nm. Once the vias have been reduced, the interactions may be determinedas described above.

FIGS. 20A-20G illustrate the ninth step 1509 in which merged via shapesare identified based off of the interactions identified in the eighthstep 1508. In an embodiment the ninth step 1509 may be performed asdescribed above with respect to FIGS. 11A-11G.

FIGS. 21A-21G illustrate the tenth step 1510 to determine if any of thecombined shapes interact with each other and may be merged together. Inan embodiment the tenth step 1510 may be performed as described abovewith respect to FIGS. 12A-12G.

FIGS. 22A-22G illustrate the eleventh step 1511 in which vias identifiedby the second marker layer 702 are either left alone, merged together,or removed completely using the fifth expansion zones 1301 and the sixthexpansion zones 1303. In this embodiment the vias that have already beenmerged (e.g., the vias with a vertical dimension of between 86 nm and 98nm, those vias located under the power rail [- - - ], and the vias witha vertical width of 36 nm are sized 0.01 in the vertical direction.

However, because of the size constraints, the size of these vias may belimited so that they do not take up too much size and interfere withother structures within the individual cells. As such, the viasidentified by the second marker layer 702 that have dimensions such thatthey extend beyond the cell boundaries are removed and a replacement viathat has been resized is put into its place. For example, for vias thatmay have an original merged dimension of 20 nm×86 nm, these vias may bereplaced by a via with a dimension of 20 nm×74 nm. Similarly, vias withdimensions of 20 nm×90 nm may be replaced by vias with a dimension of 20nm×74 nm. Such a resizing keeps the vias from extending further intotheir respective cells and interfere with the remainder of the celldesign.

Similarly, for vias that are not merged, these vias may be sized upwardsin order to ensure that the vias are returned to their originaldimensions. For example, for vias that have original dimensions of 20nm×36 nm, these vias may be expanded 10 nm in the vertical direction,such that they have dimensions of 20 nm×46 nm. Similarly, vias that mayhave dimensions of 20 nm×72 nm may be expanded by 1 nm in order to havefinal dimensions of 20 nm×74 nm.

FIGS. 22A-22G illustrate the twelfth step 1512 in which those viasidentified by the first marker layer 701 are merged, resized, or removedcompletely. In the embodiment illustrated in FIG. 22G, the combinedfourth via 333 in the first cell 301 and third via 332 in the secondcell 405 and the combined third via in the third cell 409 and the fourthvia 333 in the fourth cell 411 are expanded in order to merge the viasinto a single via. In an embodiment the expansion may be performed byexpanding the vias in the vertical direction a distance to merge thecells, such as by being 2 nm in the vertical direction.

Once the vias have been expanded and merged, the single via may then bereduced in the vertical direction by a similar amount in order to bringthe vias back to size. For example, in the embodiment illustrated inFIG. 22G in which the combined fourth via 333 in the first cell 301 andthird via 332 in the second cell 405 and the combined third via in thethird cell 409 and the fourth via 333 in the fourth cell 411 are merged,the combined via may then be reduced in size a similar distance, such as2 nm. As such, in an embodiment in which the original vias havedimensions such as 20 nm×20 nm, the new combined via has dimensions of20 nm×44 nm.

FIGS. 23A-23G illustrate a fifteenth step 1515 which may be used to helpovercome photolithographic limitations relating to the “L” shape 1101.In particular, due to process conditions, it may be advantageous toseparate the photolithographic masks that are used to form the “L” shape1101 into two separate masks in order to avoid pattern degradation. Inthe embodiment illustrated in FIG. 23F, the combined fourth via 333 inthe first cell 301 and third via 332 in the second cell 405 (which wasidentified as being part of the L-shape) is expanded vertically by atenth distance D₁₀ to form a seventh expansion zone 2301 and an eighthexpansion zone 2303 to see if it will interact (e.g., overlap) with ametal-zero, such as the first metal zero connection 335 in the fourthcell 411.

FIGS. 24A-24G illustrate that, once it has been determined that theL-shape interacts, the L-shape is then removed and replaced by twoseparate shapes. In an embodiment the first shape may be a first leg ofthe original L-shape and the second shape may be the second leg of theoriginal L-shape. In a particular example, the first shape may be theoriginal via (e.g., the combined fourth via 333 in the first cell 301and third via 332 in the second cell 405) along with the first expansionzone 901 from the fourth step 1504. Alternatively, in an embodiment inwhich the first expansion zone 901 is not desired to be used, theoriginal via (e.g., the combined fourth via 333 in the first cell 301and third via 332 in the second cell 405) may simply be extended enoughto contact the third expansion zone 907, such as by being expanded 24 nmin the first direction 803. Additionally, the second shape may be theoriginal via (the first via 329 in the fourth cell 411) along with thethird expansion zone 907 from the sixth step 1506.

FIGS. 25A-25G illustrate the thirteenth step 1513 which performs theremoval of the first marker layer 701, the second marker layer 702, andthe third marker layer 703. Once removed, the final design is ready tobe processed, stored, and used to prepare masks for the eventualmanufacture of semiconductor devices that utilize the cells within thecell rows.

FIG. 26 illustrates a process flow 2600 of the embodiment illustrated inFIGS. 16A-25G. In particular, it illustrates the reduction of the viasin the modified third step 1503′, as well as the analysis and potentialsplitting of the merged shapes in the fifteenth step 1515.

Once the post layout treatment 215 has been performed, the design may bestored, modified, and eventually sent to be transformed into one or moreseries of photolithographic masks. Once formed, the photolithographicmasks may be utilized in a series of masking and etching processes,among other manufacturing processes to manufacture semiconductor devicesfrom the original design.

In accordance with an embodiment, a method of designing a semiconductordevice comprising placing a first cell and a second cell into a firstcell row and placing a third cell and a fourth cell into a second cellrow adjacent to the first cell row is provided. A post placementtreatment is performed using a microprocessor after the placing thefirst cell and the second cell and after the placing the third cell andthe fourth cell, wherein the post placement treatment comprisescombining a first via in the first cell and a second via in the thirdcell into a third via, and removing a fourth via from the first cellwithout severing an electrical connection.

In accordance with another embodiment, a method of designing asemiconductor device comprising receiving a first cell, a second cell, athird cell, and a fourth cell from a cell library is provided. Using amicroprocessor, the first cell and the second cell are placed into afirst cell row and the third cell and the fourth cell are placed into asecond cell row, wherein an intersection area of the first cell, thesecond cell, the third cell, and the fourth cell comprises a first viaand a second via. Using the microprocessor, a first portion of a firstmarker layer is placed over the first via. Using the microprocessor, afirst portion of a second marker layer is placed over the second via.Using the microprocessor, the first via and the second via are analyzedbased on the first marker layer and the second marker layer, wherein theanalyzing the first via and the second via further comprises determiningif the first via should be merged with the second via or removed.

In accordance with yet another embodiment, a semiconductor devicecomprising a first cell row with a first cell and a second cell adjacentto the first cell is provided. A second cell row is adjacent to thefirst cell row, wherein the second cell row comprises a third cell and afourth cell. A merged via is electrically connected to a power/groundrail to a first source/drain region and a second source/drain region,the first source/drain region being located in the second cell and thesecond source/drain region being located in the fourth cell, the mergedvia extending into both the second cell and the fourth cell.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device comprising: anintersection region of a plurality of cells within two cell rows, theintersection region comprising: a first source region of a first cell; afirst drain region of a second cell; a second drain region of a thirdcell; and a third drain region of a fourth cell, wherein a first via anda second via are combined into an “L” shape.
 2. The semiconductor deviceof claim 1, further comprising a via extending into the second cell andthe fourth cell to connect to a first source/drain region located withinthe second cell and a second source/drain region located in the fourthcell.
 3. The semiconductor device of claim 2, wherein the via iselectrically connected to a first metal zero connection that is inphysical contact with the first source/drain region.
 4. Thesemiconductor device of claim 3, wherein the first metal zero connectionhas a first portion in physical contact with a first cell boundaryconductor in the second cell.
 5. The semiconductor device of claim 4,wherein the first metal zero connection has a second portion in physicalcontact with a contact in the fourth cell.
 6. The semiconductor deviceof claim 1, wherein the first cell comprises a first inverter and thesecond cell comprises a second inverter.
 7. The semiconductor device ofclaim 1, wherein the third cell comprises a third inverter and thefourth cell comprises a fourth inverter.
 8. A semiconductor devicecomprising: an intersection region of a plurality of cells within twocell rows, the intersection region comprising: a first source region ofa first cell; a first drain region of a second cell; a second drainregion of a third cell; and a third drain region of a fourth cell; andtwo or less vias located within the intersection region, at least one ofthe two or less vias extending into the second cell and the fourth cell,the at least one of the two or less vias electrically connecting thesecond cell and the fourth cell to a power/ground rail.
 9. Thesemiconductor device of claim 8, wherein the two or less vias is twovias.
 10. The semiconductor device of claim 9, wherein the at least oneof the two or less vias extends into the third cell.
 11. Thesemiconductor device of claim 10, wherein the at least one of the two orless vias has an “L” shaped structure.
 12. The semiconductor device ofclaim 10, wherein a second via of the two vias extends into the firstcell and the fourth cell.
 13. The semiconductor device of claim 8,wherein the at least one of the two or less vias is in electricalconnection with a first metal zero connection that is in physicalcontact with a first source/drain region.
 14. The semiconductor deviceof claim 13, wherein the first metal zero connection has a first portionin physical contact with a first cell boundary conductor.
 15. Thesemiconductor device of claim 8, wherein the first cell is a firstinverter, the second cell is a second inverter, the third cell is athird inverter, and a fourth cell is a fourth inverter.
 16. Asemiconductor device comprising: an intersection region of a pluralityof cells within two cell rows, the intersection region comprising: afirst source region of a first cell, the first cell being similar to afirst library cell in a cell library; a first drain region of a secondcell, the second cell being similar to a second library cell in the celllibrary; a second drain region of a third cell, the third cell beingsimilar to a third library cell in the cell library; and a third drainregion of a fourth cell, the fourth cell being similar to a fourthlibrary cell in the cell library; and wherein a first number of viaswithin the intersection region is less than a second number of viaslocated within a library intersection region, the library intersectionregion comprising a second source region of the first library cell, afourth drain region of the second library cell, a fifth drain region ofthe third library cell, and a sixth drain region of the fourth librarycell.
 17. The semiconductor device of claim 16, wherein at least one ofthe first number of vias is electrically connected to a first metal zeroconnection that is in physical contact with a first source/drain region.18. The semiconductor device of claim 17, wherein the first metal zeroconnection has a first portion in physical contact with a first cellboundary conductor.
 19. The semiconductor device of claim 16, wherein atleast one via of the first number of vias has an “L” shape.
 20. Thesemiconductor device of claim 16, wherein the first cell is a firstinverter, the second cell is a second inverter, the third cell is athird inverter, and the fourth cell is a fourth inverter.